advanced power n-channel enhancement mode electronics corp. power mosfet low on-resistance bv dss 40v single drive requirement r ds(on) 25m pdip-8 package i d 7a description absolute maximum ratings symbol units v ds v v gs v i d @t a =25 a i d @t a =70 a i dm a p d @t a =25 w t stg t j symbol value unit rthj-a maximum thermal resistance, junction-ambient 3 62.5 /w data and specifications subject to change without notice 200810282 1 AP9962AGD rohs-compliant product parameter rating drain-source voltage 40 gate-source voltage + 20 continuous drain current 3 , v gs @ 10v 7 continuous drain current 3 , v gs @ 10v 5.5 pulsed drain current 1 20 total power dissipation 2 -55 to 150 operating junction temperature range -55 to 150 thermal data parameter storage temperature range advanced power mosfets from apec provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. g2 d2 s2 g1 d1 s1 d1 d1 d2 d2 s1 g1 s2 g2 pdip-8
electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =250ua 40 - - v r ds(on) static drain-source on-resistance 2 v gs =10v, i d =7a - - 25 m ? ? ,
ap9962ag d fig 1. typical output characteristics fig 2. typical output characteristics fig 3. on-resistance v.s. gate voltage fig 4. normalized on-resistance v.s. junction temperature 2.01e+08
ap9962ag d fig 7. gate charge characteristics fig 8. typical capacitance characteristics fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. switching time waveform fig 12. gate charge waveform 4 0 200 400 600 800 1000 1 5 9 1317212529 v ds , drain-to-source voltage (v) c (pf) f=1.0mhz c iss c oss c rss 0 2 4 6 8 10 12 14 0 5 10 15 20 25 30 q g , total gate charge (nc) v gs , gate to source voltage (v) v ds =20v v ds =24v v ds =32v i d =7a t d(on) t r t d(off) t f v ds v gs 10% 90% q v g 4.5v q gs q gd q g charge 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , pulse width (s) normalized thermal response (r thja ) p dm duty factor = t/t peak t j = p dm x r thja + t a rthia=90 o c/w t t 0.02 0.01 0.05 0.1 0.2 duty factor=0.5 single pulse 0.01 0.1 1 10 100 0.1 1 10 100 v ds , drain-to-source voltage (v) i d (a) single pulse t a =25 o c 100us 1ms 10ms 100ms 1s dc
package outline : pdip-8 millimeters min nom max a 3.60 4.50 5.40 a1 0.38 ---- ---- a2 2.90 3.95 5.00 b 0.36 0.46 0.56 b1 1.10 1.45 1.80 b2 0.76 0.98 1.20 c 0.20 0.28 0.36 d 9.00 9.60 10.20 e 6.10 6.65 7.20 e1 7.62 7.94 8.26 e2 8.30 9.65 11.00 e l 3.18 ---- ---- 1.all dimensions are in millimeters. 2.dimension does not include mold protrusions. ?? part marking information & packing : pdip-8 2.540 bsc symbol s advanced power electronics corp. date code (ywwsss) y last digit of the year ww week sss sequence package code part numbe r e d a e b1 b l a2 c e1 e2 a1 b2 meet rohs requirement for low voltage mosfet only 9962agd ywwsss 5
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